Characterization Circuit, Gate Driver and Fixture for Wide-Bandgap Power Semiconductor Device Testing

Physical simulation, fabrication and characterization of Wide bandgap semiconductor devices

Ultrafast Spectroscopy of Wide Bandgap Semiconductor Nanostructures

Group III-nitrides have been considered a promising choice for the realization of optoelectronic devices since 1970. Since the first demonstration of the high-brightness blue lightemitting diodes (LEDs) by Shuji Nakamura and coworkers, the fabrication of highly efficient white LEDs has passed successful developments. A serious physical issue still remained, which prevents their use for high pow...

Advances in wide bandgap materials for semiconductor spintronics

Existing semiconductor electronic and photonic devices utilize the charge on electrons and holes in order to perform their specific functionality such as signal processing or light emission. The relatively new field of semiconductor spintronics seeks, in addition, to exploit the spin of charge carriers in new generations of transistors, lasers and integrated magnetic sensors. The ability to con...

Gate Driver Integrated Circuit with Breakdown Protection for Switch-mode Power Amplifiers

This paper proposes a gate driver integrated circuit to prevent breakdown of switching power amplifiers. The proposed circuit consists of a dead-time generator, level shifters, and a breakdown blocker. The dead-time generator makes non-overlapped input signals and the breakdown blocker detects instantaneous turned-on input signals and resets them to the off-state before the switching power cell...

Design A New Stable And Low Power Bandgap Reference Circuit Based On Fin-FET Device

This paper describes the design of a bandgap reference, implemented in 32 nm FinFET technology. The paper introduced new method for increasing stability of output voltage of bandgap circuit. In the proposed architecture extra feedback is used for setting the output voltage in fixed voltage. This feedback makesbandgap circuit more stable and speedy employing back gate biasing of the FinFET devic...